Back to search
Requisition ID: R10170395
- Category:Â Engineering
- Location: Manhattan Beach, California, United States of America
- Clearance Type:Â Secret
- Telecommute:Â No- Teleworking not available for this position
- Shift:Â 1st Shift (United States of America)
- Travel Required:Â Yes, 10% of the Time
- Relocation Assistance:Â Relocation assistance may be available
- Positions Available:Â 1
Northrop Grumman Microelectronics Center has an opening for a Microelectronic Semiconductor Device Engineer to join our team of qualified, diverse individuals. This position will be located in Redondo Beach, CA.
The selected candidate will support the research and development of advanced microelectronics products for the Northrop Grumman Microelectronics Center. Candidate will be responsible for leading the development and maturation of novel III-V semiconductor technologies including, but not limited to, advanced GaN HEMT technology nodes. Candidate will be responsible for advancing new technologies from early research and development through production. The ideal candidate will be able to thrive in fast-paced, multidisciplinary teams. Responsibilities will include mmW transistor design and simulation, experimental device development, root cause analysis, and RF device characterization.
The selected candidate should thrive in a fast-paced work environment with high expectations, significantly diverse assignments, and team settings across all levels. Candidate must be comfortable in a lab environment and be able to collaborate closely with process engineers, circuit designers, and test engineers.
#NGATL
Basic Qualifications:
Bachelor’s degree in a Science, Technology, Engineering or Mathematics (STEM) discipline from an accredited university and 5 years of engineering experience in an aerospace environment OR Master’s degree in STEM and 3 years of engineering experience in an aerospace environment OR Ph.D. degree in STEM from an accredited institution
Experience with semiconductor device processing
Expertise in semiconductor device physics
Proficiency in Design-of-Experiments methodologies
Ability to obtain and maintain a DoD Secret clearance
US Citizenship Required
Preferred Qualifications:
Ph.D. degree in Electrical Engineering, Chemical Engineering, or Physics
Experience with MMIC design and fabrication
Direct experience with GaN transistor development
Demonstrated track record of applying scientific principles to advance device performance
Experience with technology maturation and transition from R&D to manufacturing
Excellent communication, interpersonal skills, and the ability to interface with all levels of employees and management
Ability to prioritize and perform on multiple tasks simultaneously
Active DoD Secret Clearance #NGMCFab
The above salary range represents a general guideline; however, Northrop Grumman considers a number of factors when determining base salary offers such as the scope and responsibilities of the position and the candidate's experience, education, skills and current market conditions.
Employees may be eligible for a discretionary bonus in addition to base pay. Annual bonuses are designed to reward individual contributions as well as allow employees to share in company results. Employees in Vice President or Director positions may be eligible for Long Term Incentives. In addition, Northrop Grumman provides a variety of benefits including health insurance coverage, life and disability insurance, savings plan, Company paid holidays and paid time off (PTO) for vacation and/or personal business.
The application period for the job is estimated to be 20 days from the job posting date. However, this timeline may be shortened or extended depending on business needs and the availability of qualified candidates.
Northrop Grumman is committed to hiring and retaining a diverse workforce. We are proud to be an Equal Opportunity/Affirmative Action Employer, making decisions without regard to race, color, religion, creed, sex, sexual orientation, gender identity, marital status, national origin, age, veteran status, disability, or any other protected class. For our complete EEO/AA and Pay Transparency statement, please visit. U.S. Citizenship is required for all positions with a government clearance and certain other restricted positions.
